OA. free
Free
Micron Core Computer Science Analog Electronics Medium

QUESTION 45 For an FET or Drain Source voltage is 4V and Id is 2mA, what is the maximum...

Micron technical mcq question, verified with a worked answer. Free to practise - no sign-up.

QUESTION 45

For an FET or Drain Source voltage is 4V and Id is 2mA, what is the maximum power dissipated?

Choose one option.
Show answer & explanation
Answer: D. 8 mW

Power dissipated in an FET is calculated using P = Vds × Id. With Vds = 4V and Id = 2mA = 0.002A, the power is P = 4 × 0.002 = 0.008W = 8mW. Options B and C are unreasonably large (in kilowatts) for these small signal levels, and option A underestimates the result.

Step-by-step Derivation:
Step 1: Identify the given values:

  • Vds (drain-source voltage) = 4V
  • Id (drain current) = 2mA = 2 × 10⁻³ A = 0.002A

Step 2: Apply the power dissipation formula for a transistor:
P = Vds × Id

Step 3: Calculate:
P = 4V × 0.002A
P = 0.008W

Step 4: Convert to milliwatts:
P = 0.008W × 1000 mW/W = 8mW

Answer: 8 mW (Option D)