QUESTION 45 For an FET or Drain Source voltage is 4V and Id is 2mA, what is the maximum...
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QUESTION 45
For an FET or Drain Source voltage is 4V and Id is 2mA, what is the maximum power dissipated?
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Answer: D. 8 mW
Power dissipated in an FET is calculated using P = Vds × Id. With Vds = 4V and Id = 2mA = 0.002A, the power is P = 4 × 0.002 = 0.008W = 8mW. Options B and C are unreasonably large (in kilowatts) for these small signal levels, and option A underestimates the result.
Step-by-step Derivation:
Step 1: Identify the given values:
- Vds (drain-source voltage) = 4V
- Id (drain current) = 2mA = 2 × 10⁻³ A = 0.002A
Step 2: Apply the power dissipation formula for a transistor:
P = Vds × Id
Step 3: Calculate:
P = 4V × 0.002A
P = 0.008W
Step 4: Convert to milliwatts:
P = 0.008W × 1000 mW/W = 8mW
Answer: 8 mW (Option D)