Which of the following statements regarding the handling and application of CMOS devices...

CMOS devices are highly susceptible to Electrostatic Discharge (ESD) due to the thin gate oxide layer of the MOSFETs. All three listed precautions—preventing hot-plugging, ensuring common grounding of equipment, and using antistatic packaging—are industry-standard practices to prevent permanent device failure.

Step-by-step Derivation:
Step 1: Analyze Option A. Inserting a CMOS device into a powered circuit (hot-plugging) can cause transient current spikes or voltage mismatches between the device pins and the socket, potentially leading to latch-up or gate oxide breakdown. Thus, A is valid.
Step 2: Analyze Option B. To prevent the buildup of static electricity on the operator or the equipment, all conductive surfaces (workbenches, tools, and test gear) must be bonded to a common earth ground. This ensures that any accumulated charge is safely dissipated. Thus, B is valid.
Step 3: Analyze Option C. During transport and storage, CMOS devices can accumulate charge via friction (triboelectric charging). Antistatic tubes or conductive foam provide a Faraday-cage-like environment or a controlled dissipation path to prevent high-voltage discharges. Thus, C is valid.
Step 4: Since options A, B, and C are all standard and necessary precautions for handling CMOS devices, Option D ('All of these') is the correct choice.